dmc2400uv document number: ds35537 rev. 7 - 2 1 of 10 www.diodes.com june 2013 ? diodes incorporated dmc2400uv new product advance information s 2 d 2 q 1 q 2 d 1 s 1 g 2 g 1 complementary pair enh ancement mode mosfet product summary device v (br)dss r ds(on) max i d max t a = +25c q1 20v 0.5 ? @ v gs = 4.5v 1030ma 0.9 ? @ v gs = 1.8v 740ma q2 -20v 1.0 ? @ v gs = -4.5v -700ma 2.0 ? @ v gs = -1.8v -460ma description this new generation mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. applications ? power management functions ? battery operated systems and solid-state relays ? load switch features and benefits ? low on-resistance ? low gate threshold voltage v gs(th) <1v ? low input capacitance ? fast switching speed ? low input/output leakage ? complementary pair mosfet ? ultra-small surface mount package ? esd protected gate to 2kv hbm ? lead-free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot563 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.003 grams (approximate) ordering information (note 4) part number case packaging dmc2400uv-7 sot563 3000/tape & reel dmc2400uv-13 sot563 10000/tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (roh s 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html. marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d esd protected to 2kv top view bottom view equivalent circuit ca3 = product type marking code ym = date code marking y = year (ex: y = 2011) m = month (ex: 9 = september) sot563 top view e3 ? green
dmc2400uv document number: ds35537 rev. 7 - 2 2 of 10 www.diodes.com june 2013 ? diodes incorporated dmc2400uv new product advance information maximum ratings - q1 n-channel (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage v gss 12 v continuous drain current (note 6) v gs = 4.5v steady state t a = +25c t a = +70c i d 1030 800 ma t<10s t a = +25c t a = +70c i d 1150 900 ma continuous drain current (note 6) v gs = 1.8v steady state t a = +25c t a = +70c i d 740 570 ma t<10s t a = +25c t a = +70c i d 870 700 ma pulsed drain current (10 s pulse, duty cycle = 1%) i dm 3 a maximum body diode continuous current i s 800 ma maximum ratings - q2 p-channel (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -20 v gate-source voltage v gss 8 v continuous drain current (note 6) v gs = -4.5v steady state t a = +25c t a = +70c i d -700 -550 ma t<10s t a = +25c t a = +70c i d -820 -640 ma continuous drain current (note 6) v gs = -1.8v steady state t a = +25c t a = +70c i d -460 -350 ma t<10s t a = +25c t a = +70c i d -550 -420 ma pulsed drain current (10 s pulse, duty cycle = 1%) i dm -2 a maximum body diode continuous current i s -800 ma thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) p d 0.45 w thermal resistance, junction to ambient (note 5) steady state r ja 281 c/w t<10s 210 c/w total power dissipation (note 6) p d 1 w thermal resistance, junction to ambient (note 6) steady state r ja 129 c/w t<10s 97 c/w operating and storage temperature range t j, t stg -55 to +150 c
dmc2400uv document number: ds35537 rev. 7 - 2 3 of 10 www.diodes.com june 2013 ? diodes incorporated dmc2400uv new product advance information electrical characteristics - q1 n-channel (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 20 ? ? v v gs = 0v, i d = 1ma zero gate voltage drain current t j = +25c i dss ? ? 100 na v ds = 20v, v gs = 0v gate-source leakage i gss ? ? 1 a v gs = 5v, v ds = 0v ? ? 4.0 v gs = 8v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs(th) 0.5 ? 0.9 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds(on) ? 0.3 0.48 ? v gs = 5.0v, i d = 200ma ? 0.35 0.5 v gs = 4.5v, i d = 200ma ? 0.45 0.7 v gs = 2.5v, i d = 200ma ? 0.55 0.9 v gs = 1.8v, i d = 100ma ? 0.65 1.5 v gs = 1.5v, i d = 50ma ? 2 ? v gs = 1.2v, i d = 1ma forward transfer admittance |y fs | ? 1.4 ? s v ds = 3v, i d = 200ma diode forward voltage v sd ? 0.7 1.2 v v gs = 0v, i s = 500ma, dynamic characteristics (note 8) input capacitance c iss ? 37.1 ? pf v ds = 10v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 6.5 ? reverse transfer capacitance c rss ? 4.8 ? gate resistance r g ? 68 ? ? v ds = 0v, v gs = 0v, total gate charge q g ? 0.5 ? nc v gs = 4.5v, v ds = 10v, i d = 250ma gate-source charge q gs ? 0.07 ? gate-drain charge q gd ? 0.1 ? turn-on delay time t d(on) ? 4.06 ? ns v dd = 10v, v gs = 4.5v, r l = 47 ? , r g = 10 ? , i d = 200ma turn-on rise time t r ? 7.28 ? turn-off delay time t d(off) ? 13.74 ? turn-off fall time t f ? 10.54 ? notes: 5. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6. device mounted on fr-4 substrate pc board, 2oz copper, with 1inch square copper plate. 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. no t subject to product testing. 0 0.5 1.0 1.5 2.0 01 2 345 fig. 1 typical output characteristics v , drain-source voltage (v) ds i, d r ai n c u r r e n t (a) d v = 1.5v gs v = 2.0v gs v = 2.5v gs v = 4.5v gs v = 1.2v gs v = 1.8v gs 0 0.5 1.0 1.5 0 0.5 1 1.5 2 2.5 3 i, d r ain c u r r en t (a) d fig. 2 typical transfer characteristics v , gate source voltage (v) gs v = 5v ds t = -55c a t = 25c a t = 125c a t = 150c a t = 85c a
dmc2400uv document number: ds35537 rev. 7 - 2 4 of 10 www.diodes.com june 2013 ? diodes incorporated dmc2400uv new product advance information 0 0.4 0.8 1.2 1.6 2.0 0 0.4 0.8 1.2 1.6 2 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , drain-source on-resistance ( ) ds(on) ? v = 1.8v gs v = 4.5v gs v = 2.5v gs v = 1.5v gs v = 5.0v gs 0 0.2 0.4 0.6 0.8 0 0.4 0.8 1.2 1.6 i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0.6 0.8 1.0 1.2 1.4 1.6 r , d r ain-s o u r c e on-resistance (normalized) ds(on) v = 2.5.v i = 500ma gs d v = 4.5v i = 1.0a gs d 0 0.2 0.4 0.6 0.8 r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) ? fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j v = 4.5v i = 1.0a gs d v = 2.5v i = 500ma gs d 0 0.2 0.4 0.6 0.8 1.0 1.2 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 250a d i = 1ma d 0 0.4 0.8 1.2 1.6 0 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig. 8 diode forward voltage vs. current 0.2 i, s o u r c e c u r r en t (a) s t = 25c a
dmc2400uv document number: ds35537 rev. 7 - 2 5 of 10 www.diodes.com june 2013 ? diodes incorporated dmc2400uv new product advance information 0 10 20 30 40 50 60 0 5 10 15 20 fig. 9 typical capacitance v , drain-source voltage (v) ds c , c a p a c i t a n c e (p f ) f = 1mhz c iss c oss c rss 0.1 1 10 100 1,000 2 4 6 8 10 12 14 16 18 20 fig. 10 typical drain-source leakage current vs. drain-source voltage v , drain-source voltage (v) ds i, d r ain-s o u r c e leaka g e c u r r en t (na) dss t = -55c a t = 85c a t = 125c a t = 150c a t = 25c a 0 1 2 3 4 5 0 0.1 0.2 0.3 0.4 0.5 0.6 fig. 11 gate-charge characteristics q , total gate charge (nc) g v , gate-source voltage (v) gs v = 10v i = 250ma ds d 0.01 0.1 1 10 100 v , drain-source voltage (v) fig. 12 soa, safe operation area ds 0.001 0.01 0.1 1 10 i, d r ain c u r r en t (a) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w
dmc2400uv document number: ds35537 rev. 7 - 2 6 of 10 www.diodes.com june 2013 ? diodes incorporated dmc2400uv new product advance information electrical characteristics - q2 p-channel (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss -20 ? ? v v gs = 0v, i d = -1ma zero gate voltage drain current t j = 25c i dss ? ? -100 na v ds = -20v, v gs = 0v gate-source leakage i gss ? ? 1.0 ? a v gs = 5v, v ds = 0v ? ? 5.0 v gs = 8v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs ( th ) -0.5 ? -1.0 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) ? 0.67 0.97 ? v gs = -5v, i d = -100ma ? 0.7 1.0 v gs = -4.5v, i d = -100ma ? 0.9 1.5 v gs = -2.5v, i d = -80ma ? 1.2 2.0 v gs = -1.8v, i d = -40ma ? 1.5 3.0 v gs = -1.5v, i d = -30ma ? 5 ? v gs = -1.2v, i d = -1ma forward transfer admittance |y fs | ? 0.7 ? s v ds = -3v, i d = -100ma diode forward voltage v sd ? -0.75 -1.2 v v gs = 0v, i s = -330ma, dynamic characteristics (note 7) input capacitance c iss ? 46.1 ? pf v ds = 10v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 7.2 ? reverse transfer capacitance c rss ? 4.9 ? gate resistance r g ? 14.3 ? ? v ds = 0v, v gs = 0v, total gate charge v gs = -4.5v q g ? 0.5 ? nc v ds = -10v, i d = -250ma total gate charge v gs = -10v q g ? 0.85 ? gate-source charge q g s ? 0.09 ? gate-drain charge q g d ? 0.09 ? turn-on delay time t d ( on ) ? 8.5 ? ns v dd = -3v, v gs = -2.5v, r l = 300 ? , r g = 25 ? , i d = -100ma turn-on rise time t r ? 4.3 ? turn-off delay time t d ( off ) ? 20.2 ? turn-off fall time t f ? 19.2 ? notes: 5. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6. device mounted on fr-4 substrate pc board, 2oz copper, with 1inch square copper plate. 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. no t subject to product testing. 012 345 -v , drain -source voltage (v) fig. 13 typical output characteristics ds -i , d r ai n c u r r e n t (a) d 0 0.2 0.4 0.6 0.8 1.0 01 2 3 4 -v , gate source voltage(v) fig. 14 typical transfer characteristics gs -i , d r ai n c u r r e n t (a) d 0 0.2 0.4 0.6 0.8 1.0 t = 125c a ?
dmc2400uv document number: ds35537 rev. 7 - 2 7 of 10 www.diodes.com june 2013 ? diodes incorporated dmc2400uv new product advance information 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -i , drain source current fig. 15 typical on-resistance vs. drain current and gate voltage d r ,d r ain-s o u r ce o n- r esistance( ) ds(on) ? 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v=2.5v gs - v = -4.5v gs v=1.8v gs - 0.01 0.1 1 10 -i , drain source current (a) fig. 16 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r ce o n- r esistance( ) ds(on) ? t = 150c a 0.6 0.8 1.0 1.2 1.4 1.6 r , d r ai n -s o u r c e on-resistance (normalized) ds(on) -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 17 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 18 on-resistance vs.temperature r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) ? 0 0.5 1.0 1.5 2.0 0 0.2 0.4 0.6 0.8 1.0 -50-25 0255075100125150 t , junction temperature ( c) fig. 19 gate threshold variation vs. ambient temperature j ? -v , g a t e t h r es h o ld v o l t a g e (v) gs(th) i= 250a d ? i= 300a d ? 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v , source-drain voltage (v) fig. 20 diode forward voltage vs. current sd -i , s o u r c e c u r r en t (a) s 0 0.2 0.4 0.6 0.8 1.0 t= 25c a ?
dmc2400uv document number: ds35537 rev. 7 - 2 8 of 10 www.diodes.com june 2013 ? diodes incorporated dmc2400uv new product advance information 0 20 40 60 80 c , j u n c t i o n c a p a c i t an c e (p f ) t 0 5 10 15 20 -v , drain-source voltage (v) ds fig. 21 typical junction capacitance f = 1mhz c iss c oss c rss 0.1 10 100 1,000 -i , leaka g e c u r r e n t (na) dss 1 -v , drain-source voltage(v) fig. 22 typical drain-source leakage current vs. voltage ds 04 8121620 t = 1 a 25 c ? t = 8 a 5c ? t = 2 a 5c ? t = 1 a 50 c ? 0 1 2 3 4 5 6 7 8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 fig. 23 gate-charge characteristics q , total gate charge (nc) g v , gate-source voltage (v) gs v = -10v i = -250ma ds d 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 -v , drain-source voltage (v) fig. 24 soa, safe operation area ds -i , d r ai n c u r r e n t (a) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w 0.000001 0.0001 0.001 0.01 0.1 1 10 100 1,000 fig. 25 transient thermal response t , pulse duration time (s) 1 0.00001 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 ? r (t) = r(t) * ? ja r r = 275c/w ? ? ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5
dmc2400uv document number: ds35537 rev. 7 - 2 9 of 10 www.diodes.com june 2013 ? diodes incorporated dmc2400uv new product advance information package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. sot563 dim min max typ a 0.15 0.30 0.20 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d - - 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.55 0.60 0.60 l 0.10 0.30 0.20 m 0.10 0.18 0.11 all dimensions in mm dimensions value (in mm) z 2.2 g 1.2 x 0.375 y 0.5 c1 1.7 c2 0.5 a m l b c h k g d x z y c1 c2 c2 g
dmc2400uv document number: ds35537 rev. 7 - 2 10 of 10 www.diodes.com june 2013 ? diodes incorporated dmc2400uv new product advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated a nd all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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